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Common Source Push-Pull Pair
D G S S G S S D
ARF477FL
ARF477FL
RF POWER MOSFET
N - CHANNEL PUSH - PULL PAIR
165V
400W
100MHz
The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 100 MHz.
* Specified 150 Volt, 65 MHz Characteristics: * Output Power = 400 Watts * *
Gain = 15dB (Class AB) Efficiency = 50% min
* High Performance Push-Pull RF Package. * High Voltage Breakdown and Large SOA
for Superior Ruggedness.
* Low Thermal Resistance. * RoHS Compliant
All Ratings: TC = 25C unless otherwise specified.
Ratings 500 500 15 30 750 -55 to 175 300 Unit V A V W C
MAXIMUM RATINGS
Symbol VDSS VDGO ID VGS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25C (each device) Gate-Source Voltage Total Power Dissipation @ TC = 25C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
Static Electrical Characteristics
Symbol BVDSS VDS(ON) IDSS IGSS gfs gfs1/gfa2 VGS(TH) VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage 1 (ID(ON) = 7.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 15V, ID = 7.5A) Forward Transconductance Match Ratio (VDS = 15V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) Gate Threshold Voltage Match (VDS = VGS, ID = 50mA) 3.5 0.9 3 5.6 Min 500 2.9 4 25 250 100 8 1.1 5 0.2 Volts Typ Max Unit V
A nA mhos
Thermal Characteristics
Symbol RJC RJHS Parameter Junction to Case Junction to Sink (High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) Min Typ 0.18 0.30 Max 0.2 0.32 Unit C/W
050-4952 A 5-2009
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS (per section)
Symbol CISS Coss Crss td(on) tr td(off) tf Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 50V f = 1MHz VGS = 15V VDD = 250V ID = ID[Cont.] @ 25C RG = 1.6 W Min Typ 1890 350 75 7 6 20 4.0 7
ARF477FL
Max 2100 390 90 pF Unit
nS
Functional Characteristics
Symbol GPS Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 27MHz Idq = 0mA VDD = 125V POUT = 300W Min 14 50 Typ 16 55 Max Unit dB %
No Degradation in Output Power
1. Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
25 ID, DRAIN CURRENT (AMPERES)
VGS=15 & 10V
9V
5000 Ciss CAPACITANCE (pf)
20 8V 15 7V 10 6.5V 6V 5 5.5V 5V 4.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics 1000 500
Coss Crss
100 50
0
10 .1 .5 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
16 ID, DRAIN CURRENT (AMPERES)
TJ = -55C
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
ID, DRAIN CURRENT (AMPERES)
56.00
OPERATION HERE LIMITED BY R (ON) DS
12
10.00
8
1.00
4 TJ = +125C
050-4952 A 5-2009
TJ = -55C
TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics
TC =+25C TJ =+150C SINGLE PULSE 0.10 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area
ARF477FL
0.25 ZJC, THERMAL IMPEDANCE (C/W)
0.20
D = 0.9 0.7 0.5 0.3
Note:
0.15
0.10
PDM
t1 t2
0.05 0.1 0 0.05 10
-5
SINGLE PULSE 10
-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10 -1 RECTANGULAR PULSE DURATION (SECONDS) Figure 5a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
TJ (C)
.0915
Dissipated Power (Watts)
TC (C)
.108 .133F
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
.0111F
Figure 5b, TRANSIENT THERMAL IMPEDANCE MODEL
Freq. (MHz) 40 60 80
Zin () 1.5 - j 10 1.9 - j 1.3 2.2 - j 0.82
ZEXT
ZOUT () 24 - j 37 13 - j 29 7.9 - j 24
ZIN - Gate shunted with 100 Idq = 0 ZOL - Conjugate of optimum load for 400 Watts output at Vdd=125V
050-4952 A 5-2009
ARF477FL
65MHz Test Circuit
Thermal Considerations and Package Mounting:
.100 .100 .100
1.000 .125R 4 pls
.325 +/- .010 .080
.125dia 4 pls
.570
ARF477FL
.320
The rated power dissipation is only available when the package mounting surface is at 25C and the junction temperature is 175C. The thermal resistance between junctions and case mounting surface is 0.23 C/W. When installed, an additional thermal impedance of 0.07C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. Use the minimum amount necessary to coat the surface. The heatsink should incorporate a copper heat spreader to obtain best results. The package design clamps the ceramic base to the heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the base and the heat sink. Four 4-40 (M3) screws provide the required mounting force. T = 6 in-lb (0.68 N-m).
HAZARDOUS MATERIAL WARNING The white ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste.
1.250 .325
.150
.175
.175
.150
.200 .300 .005 .040
050-4952 A 5-2009
1.500
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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